Document Type

Article

Publication Date

2006

Publication Title

Nano Letters

Volume

6

Issue

6

Publisher Name

American Chemical Society

Abstract

We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated Au electrodes.

Comments

Author Posting. © 2006 American Chemical Society. This is the author's version of the work. It is posted here by permission of the American Chemical Society for personal use, not for redistribution.The definitive version was published in Nano Letters, Volume 6, Issue 6, 2006. https://dx.doi.org/10.1021/nl060731i

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