Document Type
Article
Publication Date
4-9-2009
Publication Title
Physical Review B
Volume
79
Issue
16
Pages
1-5
Publisher Name
American Physical Society
Abstract
Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single molecule transistor devices in the Kondo regime. The conductance at low bias and temperature adheres to a scaling function characterized by two parameters. This result, analogous to that reported recently in semiconductor dots with Kondo temperatures two orders of magnitude lower, demonstrates the universality of this scaling form. We compare the extracted values of the scaling coefficients to previous experimental and theoretical results.
Recommended Citation
Scott, GD, ZK Keane, JW Ciszek, JM Tour, and D Natelson. "Universal scaling of nonequilibrium transport in the kondo regime of single molecule devices" in Physical Review B 79, 2009.
Creative Commons License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License.
Copyright Statement
© American Physical Society, 2009.
Comments
Author Posting. © American Physical Society, 2009. This article is posted here by permission of the American Physical Society for personal use, not for redistribution. The article was published in Physical Review B, 79, 2009, http://dx.doi.org/10.1103/PhysRevB.79.165413